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Time dependent thermoelectric performance of a bundle of silicon nanowires for on-chip cooler applications

机译:片上冷却器应用中一束硅纳米线的时间相关热电性能

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摘要

With finite element simulation, the time dependent thermoelectric performance of silicon nanowires (SiNWs) is studied systematically. Short response time has been observed in SiNW cooler which decreases with increasing of the number of SiNWs. Moreover, the impacts of inhomogeneous thermal conductivity distribution in one bundle on the cooling temperature have been studied. The cooling temperature decreases due to the existing of unexpected high thermal conductivity SiNW. This impact can be suppressed in large system. Our results provide a comprehensive performance analysis of SiNWs for on-chip thermoelectric cooler applications.
机译:通过有限元模拟,系统地研究了硅纳米线(SiNWs)随时间变化的热电性能。在SiNW冷却器中观察到响应时间短,随SiNW数量的增加而缩短。此外,研究了一束中不均匀的导热系数对冷却温度的影响。由于存在出乎意料的高热导率SiNW,冷却温度降低。在大型系统中可以抑制这种影响。我们的结果为片上热电冷却器应用提供了SiNW的综合性能分析。

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  • 来源
    《Applied Physicsletters》 |2010年第24期|243104.1-243104.3|共3页
  • 作者单位

    Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), Singapore 117685, Singapore;

    Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), Singapore 117685, Singapore;

    Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), Singapore 117685, Singapore;

    Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), Singapore 117685, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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