Enhancement of Radiative Efficiency of Nitride-Based LEDs via Staggered InGaN Quantum Wells Emitting at 420-500 nm

机译：通过交错的Ingan量子孔在420-500nm发射氮化物的LED辐射效率的增强

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Polarization band engineering via staggered InGaN quantum well allows enhancement of radiative recombination rate, leading to significant improvement of luminescence and LEDs output power by > ～4 times.

机译：偏振带工程通过交错的Ingan量子井允许提高辐射重组率，从而显着改善发光，LED输出功率>〜4次。

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《Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference》|2007年||共2页
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作者
Ronald A. Arif; Yik-Khoon Ee; Nelson Tansu;
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原文格式 PDF
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中图分类 TN24-53;
关键词
Light-Emitting Diodes; Quantum-Well Devices;

机译：发光二极管;量子阱器件;

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专利

1. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes [J] . Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu Applied Physics Letters . 2007,第9期

机译：通过交错的InGaN量子阱进行极化工程以增强发光二极管的辐射效率
2. High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes [J] . Seoung-Hwan Park, Doyeol Ahn, Jong-Wook Kim Applied Physicsletters . 2009,第3期

机译：高效交错式530 nm InGaN / InGaN / GaN量子阱发光二极管
3. Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm [J] . Hongping Zhao, Ronald A. Arif, Yik-Khoon Ee, Optical and quantum electronics . 2008,第5a6期

机译：用于420-500 nm发射的激光的应变补偿InGaN-AlGaN量子阱有源区的光增益分析
4. Enhancement of Radiative Efficiency of Nitride-Based LEDs via Staggered InGaN Quantum Wells Emitting at 420-500 nm [C] . Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference . 2007

机译：通过交错的Ingan量子孔在420-500nm发射氮化物的LED辐射效率的增强
5. Peak radiative efficiency and electron-drift-induced efficiency droop in iii-v nitride-based light-emitting diodes. [D] . Lin, Guan-Bo. 2013

机译：iii-v氮化物基发光二极管的峰值辐射效率和电子漂移引起的效率下降。
6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
7. Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes [O] . Tansu, Nelson, Dierolf, Volkmar, Huang, Gensheng, 2011

机译：交错InGaN量子阱发光二极管提高辐射效率
8. Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes. [R] . Tansu, N. 2013

机译：交错InGaN量子阱发光二极管提高辐射效率。

Enhancement of Radiative Efficiency of Nitride-Based LEDs via Staggered InGaN Quantum Wells Emitting at 420-500 nm

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