And a method of manufacturing a gallium nitride-based light emitting device and a method of growing a gallium nitride-based semiconductor layer including an InGaN layer

摘要

PROBLEM TO BE SOLVED: To prevent the dissociation of In in an InGaN growth layer and minimize the worsening of crystallinity of a growth layer by sequentially forming the InGaN layer and an AlGaN layer at a particular substrate temperature, and by specifying the relations among the number of layers of AlGaN layers, thickness of each layer and Al composition ratio of each layer. ;SOLUTION: After the growth of an InGaN growth layer and an AlGaN indium dissociation prevention layer at a substrate temperature of 600°C to 900°C, when the substrate is heated to temperature higher than or equal to 900°C for the growth of GaN or the like, Ga atoms are evaporated from the AlGaN indium dissociation prevention layer. Because of this, the AlGaN indium dissociation prevention layer becomes an AlGaN layer with the aluminum composition being greater than that prior to raising of the temperature, and this layer prevents the slip of In atoms. Here, the relations among the number of layers, thickness of each layer d_i (i=1,..., N), aluminum composition x_i (i=1,..., N) of each layer of an Al_xGa_1-xN layer used as the indium dissociation prevention layer are so made so to satisfy the equation.;COPYRIGHT: (C)1999,JPO