Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures

摘要

We have prepared bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AHnGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surfaces of the LEDs with p-AlInGaN layers were rough with high density of hexagonal pits. It was also found that pit width and pit density depend on the growth temperature of the p-AlInGaN layer. Furthermore, it was found that we can achieve 62% enhancement in output intensity from the LED with 820℃ p-AlInGaN cap layer without increasing the LED operation voltage.