Indium Tin Oxide (ITO) films were deposited on nonalkali glass substrate by dc magnetron sputtering using high density ITO targets which were prepared under different conditions such as conductivity and micro-pore size. In order to investigate correlation between target and film properties, depositions were carried out at total gas pressure (P_(tot)) of 0.5 Pa, substrate temperature (T_s) of RT ～300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ～ 1.5% and dc power of 100W. In the case of conductivity, high conductivity target A2 showed relatively high stability in electrical property with increasing target erosion ratio. Optimum O2 addition ratio to obtain the lowest resistivity was decreased with increasing target erosion ratio. High conductivity ITO target could lead to decrease in micro-nodule formation on the target surface because of high cooling efficiency. In the case of micro-pore size, clear difference in resistivity of the films was not observed between two targets for 11 hours sputtering where target surface was eroded about 20%. Whereas, target B2 showed small degradation in resistivity with increasing sputtering time after 11 hours compared to large micro-pore size target. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10~(-4) Ωcm for the film deposited using target B2 at O2/(O2+Ar) ratio of 0.05% and at T_s =300 °C.
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