首页> 外文会议>Conference on Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS >A transient charging model to predict actuation-voltage shift in RF MEMS capacitive switches
【24h】

A transient charging model to predict actuation-voltage shift in RF MEMS capacitive switches

机译:一种瞬态充电模型,以预测RF MEMS电容开关中的致动电压移位

获取原文

摘要

For state-of-the-art RF MEMS capacitive switches, a dielectric-charging model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage. The model was extracted from measured charging and discharging transient currents on the switch dielectric under different control voltages. The model was verified against the actuation-voltage shift under different control waveforms. Duty factor and peak voltage of the control waveform were found to be critical acceleration factors for the charging effects while actuation frequency is not an acceleration factor. The model is capable of predicting the actuation-voltage shift under complex control waveforms such as the dual-pulse waveforms. For RF MEMS capacitive switches that fail mainly due to dielectric charging, the model can be used to design control waveforms that can either prolong lifetime or accelerate failure.
机译:对于最先进的RF MEMS电容开关,构造介质充电模型以预测喷射到电介质的电荷量和致动电压的相应变换。在不同的控制电压下从测量的充电和放电瞬态电流中提取模型。根据不同控制波形下的致动电压偏移验证该模型。发现控制波形的占空比和峰值电压是充电效应的关键加速因子,而致动频率不是加速度因子。该模型能够在诸如双脉冲波形的复杂控制波形下预测致动电压移位。对于RF MEMS电容开关,该电容开关主要由于电介质充电,该模型可用于设计可以延长寿命或加速故障的控制波形。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号