The Effect of y-Ray Irradiation on Optical Properties of Single Photon Sources in 4H- SiC MOSFET

摘要

We investigated the effects of y-ray irradiation on single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). After y-ray irradiation, the number of SPSs temporarily increased. However, the ratio of unstable SPSs increased with increasing absorbed dose. However, such unstable ones generated by irradiation gradually disappeared. Finally, the density of the SPSs becomes comparable with that before irradiation. We discuss a possible mechanism of these phenomena in terms of the interaction between mobile hydrogen atoms and interface defects.