Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers

摘要

Temperature-dependent mechanisms and characteristics of 4H-SiC JBS rectifiers were described by theoretical and experimental results. The forward on-resistance of 4H-SiC JBS rectifier consists of several components, the drift region resistance is most sensitive to temperature than others. According to the theoretical and experimental results, the leakage current is mainly affected by the thermionic emission with the image force barrier height lowering and tunneling. At different temperatures and reverse bias, the contributions of thermionic emission with barrier lowering and the tunneling to leakage current are not the same. Samples with the doping concentration of N_D=6.5E15cm~(-3) and N_D=lE16cm~(-3) were manufactured in the same process. The forward I-V-T and reverse I-V-T characteristics of the JBS samples were measured at different temperatures (300K to 523K), and temperature-dependent ideality factor, barrier height and resistance were also analyzed.