首页>
外国专利>
JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N JUNCTIONS AND METHODS OF MAKING
JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N JUNCTIONS AND METHODS OF MAKING
展开▼
机译:具有表观生长的P + -N结的结垒肖特基整流器和制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p+-n junctions and self-planarizing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The device may include an edge termination structure such as an exposed or buried P+ guard ring, a regrown or implanted junction termination extension (JTE) region, or a “deep” mesa etched down to the substrate. The Schottky contact to the second n-type drift region and the ohmic contact to the p-type region together serve as an anode. The cathode can be formed by ohmic contact to the n-type region on the backside of the wafer. The devices can be used in monolithic digital, analog, and microwave integrated circuits.
展开▼