机译:性能接近理想的超高压Ni / 4H-SiC结势垒肖特基整流器的实验研究与表征
State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan 523808 China;
State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;
State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Beijing 102209 China;
Microsystem and Terahertz Research Center China Academy of Engineering Physics Mianyang 621900 China;
Silicon carbide; Ni-Schottky; MGM-FLR; Ultra-high voltage;
机译:线性梯度场限制环高压4H-SiC结势垒肖特基整流器的实验和数值分析
机译:4H-SiC结势垒肖特基整流器中深电子陷阱的表征
机译:大面积4H-SiC 10kV结型势垒肖特基整流器的性能和稳定性
机译:4H-SiC结障肖特基整流器的温度依赖机制及特性研究
机译:半导体结中深层杂质的电学表征:掺D的P型硅上的肖特基势垒。
机译:Ni / 4H-SiC肖特基二极管辐射探测器的制造与表征其敏感面积高达4 cm2
机译:高能电子辐照Ni / 4H-siC肖特基势垒二极管的电学特性