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Chip Joining of High End Flip Chip Organic Packages - Interconnect Pitch Reduction Challenges

机译:高端倒装芯片有机包装的芯片加入 - 互连降压挑战

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As the semiconductor technology nodes move to 45nm, 32nm and then 22nm, the question of fundamental limits to traditional transistor scaling becomes increasingly prevalent. Does this same concern transcend to the chip to substrate interconnect? With each node, and its corresponding increase in transistor density, interconnection density from chip to substrate must increase accordingly, hence driving down the size of each interconnection. On the other hand, the drive to designing more performance into each semiconductor device results in other aspects of the device that do not scale accordingly; for example current per interconnection and chip size. Moreover, material sets are not standing still - more fragile low K dielectrics, Pb-free solders and denser, more complex organic substrates all impose additional challenges to the chip-substrate interconnection. So it becomes incumbent upon those tasked with designing, manufacturing, and assuring the quality of packages with higher numbers of finer pitch/smaller interconnects to first determine the pinch points then explore innovations in either material sets or processes to best address such pinch points. This paper focuses upon the pinch points that finer pitch interconnections impose specifically upon the flip chip solder reflow join process. The role of this process, often termed the Chip Join process, is to not only form reliable solder joints between chip and substrate but to do so in a manner that does not adversely affect the integrity of the interconnect (including isolation between interconnects) nor the integrity of the semiconductor device itself. As such, several aspects must be examined when considering the impact imposed upon chip joining by increasingly finer pitches and, more importantly, the smaller interconnection sizes that these finer pitches drive. Of course, actual joint creation, which is driven by the ability of the chip bump to wet the substrate pad, is of paramount importance and shall be addressed in detail. However, other issues during chip joining, such as electrical shorting, or near shorting, between joints as well as stresses that the joining process imparts on the back end of line (BEOL) wiring layers of the chip, also become more critical with diminished interconnection pitches and joint sizes, and will therefore be addressed.
机译:随着半导体技术节点移动到45nm,32纳米和22纳米然后,与传统的晶体管缩放基本限制的问题变得越来越普遍。这是否同样关注超越到芯片衬底互连?与每个节点,并在晶体管的密度,从芯片到衬底的互连密度必须相应地增加其相应的增加,因此压低每个互连的大小。在另一方面,驱动器设计更多的性能到在不相应地缩放设备的其它方面的每个半导体器件的结果;每互连和芯片尺寸的示例性电流。此外,材料组不静止不动 - 更脆弱的低K电介质,无铅焊料和更密集,更复杂的有机基质的,全部强加了额外的挑战到芯片基板互连。因此,它成为义不容辞的责任与那些负责设计,制造和封装保证的质量与细间距的数字高/小互连先确定夹点,然后探讨任何材料组或流程来更好地满足这样的夹点创新。本文侧重于收缩点是细间距互连在倒装芯片回流焊过程中加入具体征收。这一过程的作用,通常称为芯片的加入过程中,不仅是为了形成芯片和基板,而是以这样的方式不会不利互连(包括互连之间的隔离)的完整性影响这样做也不之间可靠焊点半导体装置本身的完整性。因此,有几个方面必须考虑在芯片通过越来越细距加盟施加的影响时进行检查,更重要的是,小尺寸的互连,这些细距开车。当然,实际的共同创作,这是由芯片的凸点到润湿基底垫的能力驱动,是极为重要的,并应在详细地讨论。然而,芯片中的其他问题接合,如电短路,或接近短路,关节以及应力之间的布线芯片的层上线的后端的接合过程使(BEOL),也成为与减少互连更关键沥青和关节尺寸,因此将得到解决。

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