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Mechanical Properties Measurements of 0.35-μm BiCMOS MEMS Structures

机译:机械性能测量为0.35微米BICMOS MEMS结构

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CMOS-MEMS mechanical properties, such as effective Young's modulus, axial residual stress, and vertical and lateral stress gradients, are strongly dependent on composition, i.e., relative metal and dielectric content. Test structures, measurements and FEA simulations are reported on these four mechanical properties for high-aspect-ratio (HAR) MEMS structures with different compositions, formed by post-CMOS micromachining of two different 0.35-μm BiCMOS technologies provided by Jazz Semiconductor and STMicroelecronics. FEA simulation results verify the experimentally extracted values of effective Young's modulus and axial residual stress. Die-to-die effective Young's modulus variations are 2 GPa for Jazz chips and 3 GPa for ST chips. Variations of axial residual stress, and vertical and lateral stress gradients are strongly dependent on post-CMOS processing.
机译:CMOS-MEMS机械性能,例如有效的杨氏模量,轴向残余应力和垂直和横向应力梯度,具有强烈依赖于组合物,即相对金属和介电含量。在这四种机械性能下,对具有不同组成的高纵横比(HAR)MEMS结构的这四种机械性能,通过由Jazz Semiconductu和STMicroelecronics提供的两种不同的0.35-μmBICMOS技术形成的不同组合物,由不同组合物形成的这四个机械性能。 FEA仿真结果验证了实验提取的有效杨氏模量和轴向残余应力的值。模具有效的杨氏模量变化是爵士芯片和ST芯片3 GPA的2 GPA。轴向残余应力和垂直和横向应力梯度的变化强烈取决于CMOS后处理。

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