Ba-hexaferrite films grown on single crystal 6-H SiC with Low FMR Linewidth

摘要

It has been a longstanding goal of the ferrite materials and microwave device communities to interface nonreciprocal microwave devices (i.e. circulators, isolators, phase shifters, etc.) with semiconductor devices platforms. An integral step in this development is the growth of ferrite materials on semiconductors. Previous attempts to grow spinels on GaAs lead to the disassociation of the semiconductor due to the high temperature processing of the ferrites. The growth of high quality large crystals of wide bandgap semiconductors, GaN and SiC, now make it possible to revisit this problem.