Epitaxial growth of M-type Ba-hexaferrite films on MgO (111)‖SiC (0001) with low ferromagnetic resonance linewidths

摘要

Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe_(12)O_(19) target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16 900 Oe, a magnetization (as 4πM_s) of 4.4 kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe, thus demonstrating sufficient properties for microwave device applications.