Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies

Junpei Sakurai; Katsutaka Sasaki; Hideto Yanagisawa; Satoko Shinkai; Yoshio Abe

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Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies

机译：（111）ZrN /（111）Si上的（0001）Ru薄膜的低温外延生长及其表面形貌

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We have investigated the epitaxial growth of (0001 )Ru thin films on (111)ZrN/(111)Si epitaxial systems at room temperature using an ultrahigh-vacuum dc magnetron sputtering system. The film quality obtained and the epitaxial relationship were evaluated b

机译：我们已经研究了在室温下使用超高真空直流磁控溅射系统在（111）ZrN /（111）Si外延系统上（0001）Ru薄膜的外延生长。评价获得的膜质量和外延关系b

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来源
《Japanese journal of applied physics》 |2008年第3issue1期|1667-1671|共5页
作者
Junpei Sakurai; Katsutaka Sasaki; Hideto Yanagisawa; Satoko Shinkai; Yoshio Abe;
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正文语种 eng
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epitaxial growth; (0001)Ru thin film; surface roughness; XRD; X-ray pole figure; AFM; GIXR;

机译：外延生长（0001）Ru薄膜;表面粗糙度;XRD;X射线极图;原子力显微镜GIXR;

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1. Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies [J] . Hideto Yanagisawa, Satoko Shinkai, Katsutaka Sasaki, Journal of Crystal Growth . 2006,第1期

机译：反应溅射在（111）Si衬底上外延生长（111）ZrN薄膜及其表面形态
2. Growth of epitaxial thin Pd(111) films on Pt(111) and oxygen-terminated FeO(111) surfaces [J] . Dohnalek Z, Kim J, Kay BD Surface Science . 2006,第17期

机译：在Pt（111）和氧封端的FeO（111）表面上生长外延Pd（111）薄膜
3. Epitaxial Growth of C_(60) Thin Films on the Bi(0001)/Si(111) Surface [J] . A. I. Oreshkin, R. Z. Bakhtizin, J. T. Sadowski, Bulletin of the Russian Academy of Sciences. Physics . 2009,第7期

机译：Bi（0001）/ Si（111）表面上C_（60）薄膜的外延生长
4. Chapter 32 Structure of Fe_3O_4(111) Films on Pt(111) and Ru(0001): The Role of Epitaxial Strain at the Iron Oxide/Metal Single Crystal Interface [C] . M. Lewandowski, N. Michalak, Z. Mi?osz, NATO Advanced Study Institute on Nanoscience Advances in CBRN Agents Detection, Information and Energy Security . 2015

机译：第32章Fe_3O_4（111）薄膜在Pt（111）和Ru（0001）中的结构：外延应变在氧化铁/金属单晶界面中的作用
5. Growth of gallium nitride and aluminum gallium nitride thin films using conventional and pendeo-expitaxial growth processes on hydrogen(6)-silicon carbide(0001) and silicon(111) substrates. [D] . Gehrke, Thomas. 2000

机译：使用常规和五极外延生长工艺在氢（6）-碳化硅（0001）和硅（111）衬底上生长氮化镓和氮化铝镓薄膜。
6. Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films [O] . Angel Aleman, Chao Li, Hicham Zaid, -1

机译：外延Pd（111）/ Al2O3（0001）薄膜的超高真空直流磁控溅射沉积
7. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates [O] . Robert F. Davis, T Gehrke, K.J. Linthicum, 2001

机译：6H-SiC（0001）和Si（111）衬底上GaN和Algan合金薄膜的pendeo-Xizaial生长和表征。

Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies

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