PHOTOCONDUCTIVITY AND PHOTOFIELD ELECTRON EMISSION IN THE SYSTEMS OF VERTICALLY INTEGRATED Ge QUANTUM DOTS ON Si(100)

摘要

Lateral photoconductivity spectra and photofield electron emission of multilayer Ge/Siheterostructures with Ge quantum dots were studied at 77 and 300 K. Measurements of lateral photoconductivity spectra at 77 K showed the presence of localized states in the potential well. The photocurrent with limiting energies of 0.3 eV and 0.33 eV can be attributed to electron transitions from localized to delocalized states. A correlation between the regularities of the photoconductivity and photofield emission from such systems was revealed.