Vertical magneto-tunneling through a quantum dot and the density of states of small electronic systems

摘要

One-electron tunneling through a quantum dot with a strong magnetic field inthe direction of the current is studied. The linear magneto-conductance iscomputed for a model parabolic dot with seven electrons in the intermediatestates and for different values of the magnetic field. It is shown that the dotdensity of states at low excitation energies can be extracted from a precisemeasurement of the conductance at the upper edge of the Coulomb blockadediamond. We parametrized the density of states with a single ``temperature''parameter (in the so called ``constant temperature approximation''), and foundthat this parameter depends very weakly on the magnetic field.