A Novel RF High-Q Metal-Semiconductor-Metal Planar Inter-Digitated Varactor Based on Double-Channel AlGaN/GaN HEMT Structure

摘要

A novel GaN-based Double-Channel Metal-Semiconductor-Metal Configuration Planar Inter-Digitated varactor fabricated with HEMT compatible process is presented. Our varactors achieved high Q-factor, wide tuning range and high minimun Q-factor (Q{sub}(min)). The double-channel heterostructure extends the useful high Q-factor capacitance tuning range of the varactors. The operation of the varactor is explained by a physical equivalent circuit, in which the whole changing trend of extracted Q-factors over bias voltage and extracted resistance can be explained. The measurement results of the novel double-channel varactors are compared with the varactors facbricated on single channel heterostructure in order to show its superior performances.