Uncooled RF Electronics for Airborne Radar. AlGaN/GaN HEMT Structure Development by MBE

摘要

Using MBE efforts, concentration was focused on the homoepitaxial growth of HEMT nitride-based structures on high quality MOCVD templates grown on (0001) sapphire substrates, allowing the avoidance of the sapphire nucleation step and thus the high dislocation and extended defect density that can occur with direct MBE growth on sapphire.