Study on the Drift Effect of Potassium loe Sensing Based on the Extended Gate Field Effect TVansistor

摘要

The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package, easy preservation, insensitive light effect, and better stability. Although EGFET has above advantages, there are still some non-ideal effects such as drift etc.. The drift behavior exists during the measurement process and results in the variation of the output voltage with time. We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after 5 hours.