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Method for forming potassium/sodium ion sensing device applying extended-gate field effect transistor
Method for forming potassium/sodium ion sensing device applying extended-gate field effect transistor
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机译:应用扩展栅场效应晶体管形成钾钠离子传感装置的方法
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摘要
A potassium/sodium ion sensing device applying an extended-gate field effect transistor, which using an extended-gate ion sensitive field effect transistor (EGFET) as base to fabricate a potassium/sodium ion sensing device, using the extended gate of the extended-gate ion sensitive field effect transistor as a signal intercept electrode, and immobilizing the hydro-aliphatic urethane diacrylate (EB2001) intermixed with electronegative additive, potassium ionophore, sodium ionophore, and the like, to fabricate a potassium/sodium ion sensing electrode. The present invention utilizes the photocurability and good hydrophilicity of the hydro-aliphatic urethane diacrylate (EB2001), and fixes potassium/sodium ionophore, can obtain a non-wave filter, single-layer, stable signal potassium and sodium ion sensor. Thus, when the present invention is applied to measure the concentration of potassium/sodium ions in a sample, the mutual interference between potassium/sodium ion electrodes can be reduced, so the measured value can be more close to the actual value.
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