Modeling of phosphorous diffusion in ion-implanted Si at dopant transient enhanced out-diffusion during vacuum rapid thermal annealing

摘要

A model of non-equilibrium out-diffusion of dopant from ion-implanted layer at rapid thermal annealing has been offered. The model is based on supposition of dependence of out-diffusion activation energy on the non-equilibrium coefficient characterizing the system non-equilibrium state from the point of view of the ratio of components concentration.