FABRICATION OF GROUP Ⅲ-NITRIDE WAVEGUIDES BY INDUCTIVELY COUPLED PLASMA ETCHING

摘要

We demonstrate the fabrication of high-mesa waveguides for structures consisting of Al_(0.1)Ga_(0.9)N cladding layers and a AlN/GaN multiple quantum well core layer using a Cl_2-based inductively coupled plasma dry etching technique. Suitable etching conditions for abrupt sidewall profiles and smooth surface morphologies have been established with excellent reproducibility. Light propagation at 1.55 μm in the waveguides was also confirmed.