GROWTH OF SELF-ASSEMBLED EPITAXIAL GERMANIUM NANOISLANDS ON SILICON SURFACES BY MOLECULAR BEAM EPITAXY

摘要

Self-assembled epitaxial Ge nanoislands have been grown on Si(100) and Si(111) surfaces by molecular beam epitaxy in a compact custom-made MBE system. Reflection high energy electron diffraction (RHEED) studies during growth shows layer to island growth transition as expected for Stranski-Krastanov growth. The samples have been characterized by in-situ scanning tunneling microscopy (STM) and ex-situ transmission electron microscopy (TEM). Growth under identical conditions appears to form larger islands on Si(110) surfaces compared to Si(100).