Laser diode on asymmetric heterostructure with two quantum wells and weak dependence of output power on temperature

摘要

The configuration of injection laser on the basis of asymmetric quantum well heterostructure with heterogeneous excitation of active region permissive to weaken essentially the threshold current and output power dependence on temperature is suggested. It is shown, that decreasing of output power with spontaneous recombination rate rising while heating the laser diode can be compensated by increasing of injection efficiency of carriers into amplifying quantum well at constant pumping current.