METHOD TO CONTROL INTERNAL QUANTUM OUTPUT OF SEMICONDUCTOR LIGHT DIODE HETEROSTRUCTURES BASED ON GaN

摘要

FIELD: measurement equipment.;SUBSTANCE: method includes radiation of a light-emitting semiconductor heterostructure by a beam of electrons and excitation of cathode luminescence, besides, excitation of cathode luminescence is carried out by radiation in a pulse mode with pulse duration from 10 ns to 400 ns. Energy of electrons is provided preferably as 18 keV and higher.;EFFECT: reduced impact of heterogeneity of ionisation losses and elimination of deterioration of active layers of semiconductor light diode heterostructures during measurements.;2 dwg