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Hybrid integrated polarization mode converters and low-voltage electrooptic modulators using crystal-ion-sliced LiNbO_3 films

机译:使用晶体离子切片的LINBO_3薄膜混合集成偏振模式转换器和低压电光调制器

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Lithium Niobate (LiNbO_3) films produced by the crystal ion slicing (CIS) method are introduced in various components in use in the optical telecommunications market. The CIS technique employs high-energy ion implantation to create a narrow (~0.2 μm) planar layer of localized damage, buried ~10 μm beneath the surface of the implanted LiNbO_3 wafers. This sacrificial layer allows for slicing of microns-thick LiNbO_3 films, either by selective wet chemical etching or by thermal shock. The obtained films have bulk material properties and morphology suitable for integrated optics applications. Slices of X-cut LiNbO_3 were used to produce zero-order wave retarders that can be inserted in slots cut into planar lightware circuits, resulting in TE-TM polarization mode conversion with high extinction ratio (30 dB) and low excess loss (< 0.1 dB). Conventional LiNbO_3 waveguide fabrication techniques were combined with the CIS process to produce CIS films of Z-cut LiNbO_3 with optical circuits patterned prior to lift-off, having propagation losses typical of bulk LiNbO_3 waveguides. Using thin sheets of LiNbO_3, velocity- and impedance-matched modulators can be fabricated with low V_πL(~7.6 V·cm) and low microwave losses (0.3 dB/cm·GHz~(1/2)). The CIS film optical circuits can be integrated into hybrid systems with otherwise incompatible, yet technologically important materials platforms.
机译:由晶体离子切片(CIS)方法产生的铌酸锂(LINBO_3)薄膜在光电信市场中使用的各种组件中引入。 CIS技术采用高能离子注入,以产生窄(〜0.2μm)的局部损坏层,埋在植入的Linbo_3晶片表面下面的〜10μm。这种牺牲层允许通过选择性湿化学蚀刻或通过热冲击切割微米厚的LINBO_3薄膜。所得薄膜具有适于集成光学应用的散装材料性能和形态。 X切割LINBO_3的切片产生零级波延迟器,可以插入切成平面光电器电路的插槽中,导致TE-TM偏振模式转换具有高消光比(30dB)和低损耗低(<0.1 D b)。传统的LINBO_3波导制造技术与顺式工艺组合以产生Z-CUT LINBO_3的顺式薄片,在剥离之前图案化的光学电路,具有典型的散装LINBO_3波导的传播损耗。使用薄的LINBO_3,速度和阻抗匹配的调制器可以用低V_π1(〜7.6V·cm)和低微波损耗(0.3dB / cm·GHz〜(1/2))制造。 CIS薄膜光电电路可以集成到混合系统中,其中包含不兼容但技术上重要的材料平台。

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