ELECTROMIGRATION OF SI ADATOMS ON SI SURFACES: A KEY TO UNDERSTANDING STEP BUNCHING INSTABILITIES DURING SUBLIMATION AND MBE GROWTH

摘要

Recent progress in understanding the mechanisms of step bunching induced by direct electric current heating is reviewed. Experiments on step bunching during sublimation and during growth of Si crystals manifest different mechanisms of instability on vicinal surfaces that operate in different temperature intervals.