Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped

摘要

The method comprises gradually heating a substrate (300) until sublimation of silicon of a first row of atoms of a free surface (302) of a silicon-carbide film (301) to form a graphene layer (303) on the free surface, where the free surface of the silicon layer is stepped and the substrate is heated under a controlled flow of an inert gas. The free surface comprises steps (305) separated by risers, which have virtually identical heights, where the steps have virtually identical treads. Each step extends approximately parallel to a support on which the substrate rests. The method comprises gradually heating a substrate (300) until sublimation of silicon of a first row of atoms of a free surface (302) of a silicon-carbide film (301) to form a graphene layer (303) on the free surface, where the free surface of the silicon layer is stepped, and the substrate is heated under a controlled flow of an inert gas. The free surface comprises steps (305) separated by risers which have virtually identical heights (2-3 Å ), where the steps have virtually identical treads with a height of 35-40 Å . Each step extends approximately parallel to a support on which the substrate rests. The method further comprises preheating the substrate under a controlled gas silicon flow before the heating step until sublimation of the first row of atoms of silicon carbide film. The silicon carbide film has a hexagonal crystalline structure.