Substrate for mass memory devices has at least partly epitaxially formed silicon semiconducting layer on stepped silicon oxide insulating layer surface with planar surface opposite stepped surface

摘要

The substrate (600) has a carrier layer (501), a silicon oxide insulating layer (502) applied to the carrier layer with at least two regions of different thicknesses so that a stepped insulating layer surface is formed and an at least partly epitaxially formed silicon semiconducting layer (303) formed on the stepped surface with a planar surface opposite the stepped surface. AN Independent claim is also included for the following: a method of manufacturing and inventive device.