The trend to more and more miniaturized devices and high-speed systems requires a corresponding package development. Shorter electrical paths and higher I/O density are the urgent needs; this all seems to find a solution in the flip chip technology. This way to connect chips was introduced by IBM in the early 60's; only in the 90's flip chip found the right environment. At the present time this technology seems to be a valid alternative to the consolidate wire bonding one. In this article a thermal characterization of the flip chip technology is presented. In the first part the experimental data of different samples are presented; a short description of the used infrared microscope is given. A comparison between the flip chip device data and the corresponding wire bonded ones is carried out. In the second part of this work a geometric model fitting the experimental data is described and the performed simulations are presented. A Laser Driver (LDR) MMIC is the test vehicle used to perform this thermal characterization; it is an IBM SiGe devices working at lOGbit/s [1]. The good shown results can justify an increased work to make the used flip chip technology a low cost and more industrial process.
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