Photoluminescence investigation of InAs/GaAs self-assembled quantum dots with 1.3μm room temperature emission

摘要

In order to apply quantum dots (QD) to the optoelectronic device applications, the optical properties of the structure have to be understood. In this work, we report on the photoluminescence (PL) properties of InAs self-assembled QDs with 1.3 μm emission at room temperature. The effects of excitation power and temperature dependence on PL spectra of QDs have been systematically investigated.