GaN quantum dots as charge storage elements for memory devices

摘要

We investigated the fabrication and the memory characteristics of metal-oxide-semiconductor (MOS) capacitors with GaN quantum-dots (QDs) embedded in the gate insulator. The GaN-QDs, which act as discrete charge storage nodes, were deposited by radio-frequency molecular-beam-deposition (RF-MBD). The influence of the deposition dose on the QDs size and density was investigated by TEM studies. Subsequent electrical characterization measurements on memory capacitors revealed enhanced electron charge trapping leading to significant memory windows. Charge retention measurements at room temperature showed that the sample with the lowest concentration of QDs exhibits a significant programming window after ten-years.