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Optically Detected Magnetic Resonance at 95 GHz of Exciton States in InAs/GaAs Quantum Dots

机译:在INAS / GaAs量子点的95 GHz的光学检测到的磁共振

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We report an optically detected magnetic resonance study of the exciton fine structure in the MBE-grown InAs/GaAs quantum dots (QDs). The ODMR spectra were detected via modulation of the total intensity of the QD emission induced by W-band (95 GHz) microwave excitation. Two spectral features (ODMR signals) are observed when the static magnetic field is either parallel or perpendicular to the growth direction z of the sample. A well-pronounced positive high-field signal observed for B ⊥ z is attributed to hole spin transitions with nonzero (as is the case of quantum wells) effective hole g-factor |gh,⊥| = 3.0. In the case when B ∥ z the high-field signal corresponds to |gh,∥| = 3.9. A strongly anisotropic low-field transition is temptatively attributed to cyclotron resonance (CR).
机译:我们在MBE-生长的INAS / GAAs量子点(QDS)中报告了激光磁共振的光学检测磁共振研究。通过调制由W波段(95GHz)微波激发诱导的QD发射的总强度来检测ODMR光谱。当静磁场平行或垂直于样品的生长方向Z时,观察到两个光谱特征(ODMR信号)。观察到B + Z的良好明显的正高场信号被归因于非零的孔旋转过渡(如量子阱的情况)有效孔G系子| GH,⊥| = 3.0。在B≠Z的情况下,高场信号对应于| GH,∥| = 3.9。强烈各向异性的低场转变是一种试用性地归因于回旋谐振(CR)。

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