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New Developments in CMP Pad Conditioner Technology

机译:CMP PAD调节器技术的新发展

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This paper focuses on the challenges and new developments in chemical mechanical planarization (CMP) pad conditioner technology for the next-generation applications, with a special emphasis on the comparative performance characterization of pad conditioners. Empirical data from a number of case studies are presented. Different design 4" disk pad conditioners were evaluated using a benchtop polisher, a benchtop tribometer, and a 300 mm wafer polisher/tribometer to determine pad cut-rate, pad surface roughness, coefficient of friction (COF), and Cu polishing behavior. Results are presented for the effect of pad conditioner design parameters, including abrasive/feature size and distribution, on the pad cut-rate and pad surface roughness. Such information may be helpful in reducing the fab selection and optimization time for pad conditioners in advanced technology node applications. Present study demonstrates the usefulness of pad conditioner laboratory scale characterization.
机译:本文侧重于化学机械平面化(CMP)焊盘调节器技术对下一代应用的挑战和新的发展,特别强调了垫护发素的比较性能表征。提出了来自许多案例研究的经验数据。使用台式抛光机,台式摩擦仪和300毫米晶圆抛光机/摩擦计评估不同的设计4“磁盘垫调节器,以确定垫切割速率,垫表面粗糙度,摩擦系数(COF)和Cu抛光行为。结果介绍焊盘调节器设计参数的影响,包括磨料/特征尺寸和分布,焊盘切割速率和垫表面粗糙度。这些信息可能有助于减少高级技术节点中PAD调节器的FAB选择和优化时间应用。目前的研究表明了垫调节器实验室表征的有用性。

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