IMPACT OF HALO IMPLANTATION ON THE LIFETIME ASSESSMENT IN PARTIALLY DEPLETED SOI TRANSISTORS

摘要

This paper investigates the impact of the presence of a HALO implanted region on the lifetime analysis, based on a study of drain current switch-off transients. The latter were experimentally determined and compared with two-dimensional numerical simulations for PD SOI nMOSFET devices fabricated in a 0.13μm CMOS technology. This study investigated for different channel lengths the drain current transient in relation with devices parameters such as the body potential, threshold voltage and the current density in the source/drain junctions. In the HALO devices the hole current density through the junctions between source/drain and body were not very significant, so that the influence of the junction is only due to the capacitive coupling between source/body and drain/body channel. For the channel length range studied (from 10 to 0.2μm), the transient time of HALO devices suffers from a 56% reduction. However, in the no HALO devices, there is beyond the capacitive coupling also a significant increase in the hole current density, causing a transient time reduction of 74%, for the same channel length range.