By computer simulation the processes of porous silicon formation and of silicon-on-porous silicon epitaxy are studied. The model of electrochemical etching is applied for p{sup}(+)Si and p{sup}(+)Si substrates and takes into account the non-homogeneous surface charge distribution, the thermal generation of holes and quantum confinement effects. The epitaxy is studied on the basis of Gilmer model extended to the case of relief surface. The porous structures obtained by computer simulation are presented for various anodization conditions. The analysis of 3D images shows the profile of porosity over depth and multifractal properties. It is shown that the mechanism of epitaxy on PS (111) surface is provided by the thin pendant layer formation. The dependence of kinetics of epitaxy upon the porosity, molecular flow density and initial surface roughness are established.
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