首页> 外文会议>Meeting of the Electrochemical Society >Investigation of Strong Metallic Ta Reduction in ZrO_2/Ta_2O_5 Multi-laminate Layer Growth
【24h】

Investigation of Strong Metallic Ta Reduction in ZrO_2/Ta_2O_5 Multi-laminate Layer Growth

机译:ZrO_2 / TA_2O_5多层压层生长的强金属TA调查

获取原文

摘要

Thin ZrO_2/Ta_2O_5 multi-laminate layer of ~10 nm was grown by atomic layer deposition (ALD) method and it was discussed about the metallic Ta reduction at the interface between ZrO_2 and Ta_2O_5. Metallic Ta 4f_(7/2) peak was observed inside of the layer from the result of XPS analysis and it is thought that strong metallic Ta reduction was happened between Ta_2O_5 and as-coming Zr source (or ZrO_2). Also, these results were supported by the Gibbs free energy calculations.
机译:通过原子层沉积(ALD)方法生长〜10nm的薄ZrO_2 / Ta_2O_5多层压层,并讨论了ZrO_2和Ta_2O_5之间的界面处的金属Ta降低。从XPS分析的结果观察到金属Ta 4F_(7/2)峰值,据认为,在Ta_2O_5和即将到来的Zr源(或ZrO_2)之间发生强金属Ta降低。此外,这些结果由GIBBS自由能量计算支持。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号