GaN/Quantum Dots/GaN Wafer Bonded Structure: Thiophenethiol Capped CdSe/ZnS Quantum Dots as Active Layer and Binding Layer

摘要

Wafer bonding technology is applied to the GaN/quantum dots/GaN p-i-n system. Processing conditions for successful wafer bonding are described. Temperature dependence of bond strength properties are characterized. Strongest bonding is achieved when annealing temperature is 350°C as a result of cross-linking due to the bidehtate nature of the thiophene thiol ligand. Electrical properties of bonded heterostructures are studied, in which a diode like I-V curve and multiple conduction channels are observed. Optical properties of the QDs active layer after bonding are also investigated.