Microstructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60 Silicon-Germanium layers

摘要

Future generations of silicon based integrated circuit technology require carrier concentrations in excess of the equilibrium dopant concentrations. In-situ doping during the epitaxial growth is an attractive alternative to place dopants where needed with tunable concentrations and hyper-abruptness. In this work we study the incorporation of boron or boron and carbon co-doping into fully strained high percentage (60%) Silicon-Germanium. We will discuss the epitaxial growth and dopant incorporation, and its effects on strain compensation due to the dopant atoms. The main focus will be on defect generation in highly strained doped SiGe layers.