OPTIMIZATION OF ULTRA-THIN BODY,FULLY-DEPLETED-SOI DEVICE,WITH RAISED SOURCE/DRAIN

摘要

We report on an ultra-thin body,fully depleted SOI device (FDSOI),with metal gate,raised source/drain,and its optimization via simulation.The physical gate length is 60 nm,the film thickness under the gate is 10 nm,and is undoped.The gate electrode is mid-gap,i.e.,a workfunction of 4.6 eV.The source and drain regions are constant doping.The overlap region doping is Gaussian with a junction depth defined as the point at which the doping concentration drops to 10~(16) cm~(-3),which for this device is 3 nm.Hydrodynamic simulations for capturing velocity overshoot are employed,with an energy relaxation time of 0.3 ps,and predicted I_(Dsat) is checked with Monte Carlo (1,2).Silicide resistivity is also included via a distributed resistance on S/D contacts (3),in both the continuum solver as well as Monte Carlo.The mobility model is from (4).