Optical and Electronic Properties of Nanoscale Si/SiO_2 Superlattices

摘要

This invited talk is focused on the fabrication and characterization of layered Si-based nanostructures,which have been called nanocrystalline silicon (nc-Si)/silicon dioxide superlattices [1].Among the many semiconducting materials,silicon is one of the most studied and definitely the most important material for commercial microelectronics.During the last several decades,the exponential growth of electronic chip complexity and drastic decrease of transistor dimensions has highlighted new directions in electronic device evolution and the potential applicability of Si nanocrystals for nanoelectronics and integrated light-emitters.The latter was stimulated by the discovery of efficient light emission in different forms of Si nanostructures [2] and by the demonstration of a Si-based light-emitting device prototype integrated into conventional microelectronic circuitry [3].