Effects of Nitridation-treatment for Electrical Properties of MONOS Nonvolatile Memories

摘要

Metal/Oxide/Nitride/Oxide/Semiconductor (MONOS) memories have been proposed because of their low program voltage and scalability [1].The possibility of using a 0.1-um generation MONOS memory cell has been demonstrated [2].In our fabrication process of a MONOS nonvolatile memory,we apply nitridation treatment before the silicon nitride film is formed.The treatment affects the electrical properties of the MONOS transistor,i.e.,the data erase and the data retention times decrease,but the ratio of these times increase [3],However,the mechanism is not clear yet.