Synergistic and Transient Effects of Plating Additives In Copper Metallization of Semiconductor Interconnects

摘要

Copper electroplating of interconnects on semiconductor wafers has recently become the mainstay for metallizing high-end microprocessors.The metallization process hinges on the ability to produce by plating defect-free fill of many millions of sub-micron vias and trenches distributed across 200 and 300 mm wafers.The key to this breakthrough technology has been a special mixture of plating additives that controls the plating process and shifts its normal tendency to preferentially metallize the more accessible wafer surface towards generating instead a bottom-up fill of the cavities.A number of experimental and modeling studies have addressed this special electrodeposition process and the additives role in particular.