A Theoretical Study of the Permanent and Transient Effects of Ionizing Radiation on the Electrical Performance of Metal Oxide Semiconductor on Sapphire Inverters.

摘要

The results of theoretical calculations on the electrical performance of p-channel metal oxide semiconductor/silicon on sapphire and complementary metal oxide semiconductor on sapphire inverters subjected to ionizing radiation are presented. Permanent changes are related to threshold voltage and, thus, are applicable to many fabrication technologies. Transient effects have been characterized for typical MOS/SOS photocurrents. For each inverter type the influence of threshold voltage and gain effects on normal DC operation, switching speed and noise margin are determined. The transient photocurrent effects on output voltage and noise margins are also presented. Every effort has been made to make the results generally applicable. Where that is not possible, specific inverters have been used to illustrate results. A first order model based on the simplified Sah equations with fixed mobility and fixed capacitance has been used in these studies. (Author)