Carrier Freeze-out and Relaxation Effects in CMOS N-channel MOSFETS at Cryogenic Temperatures Under Dynamic Operating Conditions

摘要

The operation of semiconductor circuits at low temperatures is motivated by improved device and circuit performance,potential application of superconducting films,and the need for low noise amplifier circuits to operate with low noise sensors.However N-channel CMOS transistors contained in a P-well and operated at very low temperatures (j30 K) exhibit a kink and associated hysteresis,which makes them unsuitable for linear amplification [1-4].