Characterization of SiO2 Dielectric Films in Photo-Chemical Vapor Deposition Using Vacuum Ultraviolet Excimer Lamp

摘要

Photo-chemical vapor deposition using vacuum ultraviolet excimer lamp (VUV-CVD) is a novel technology that deposit SiO2 film at room temperature without the use of high temperature or plasma [1], The films contain organic impurities coming from tetraethoxyorthosilicate (TEOS: Si(OC2H5)4) used as the precursor. Then addition of O2 molecules to TEOS is found to decrease C-H impurities [2], In this paper, we show atomic concentrations in SiO2 films deposited from TEOS or from TEOS with O2 or N2O gas.