Evaluation and Integration of PECVD Carbon-doped SiO2 Low-k Thin Films for Copper Dual-damascene Metallization

摘要

PECVD carbon-doped SiO2 (SiOC:H) low k" thin films have been investigated as promising ELD for copper/low-k dual-damascene metallization. PORA, a new Coral low k thin film from Novellus Systems, has been developed by using a new precursor which is quite different from methylsilane series precursors, i.e. SiH_m(CH3)_n (m+n=4, n=1～4). In this work, PORA has been evaluated and integrated as ILD in copper dual-damascene metallization.