Effect of N/Ga flux ration in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer

摘要

Transmission electron microscopy was employed to study the effect of N/Ga flux ratio in the growth of GaN buffer layers on the structure of GaN epitaxial layers grown by molecular-beam-epitaxy (MBE) on sapphire. The dislocation density in GaNlayers was found to increase from 1×10{sup}10 to 6±10{sup}10 cm{sup}(-2) with increase of the nitrogen flux from 5 to 35 sccm during the growth of the GaN buffer layer with otherwise the same growth conditions. All GaN layers were found to containinversion domain boundaries (IDBs) originated at the interface with sapphire and propagated up to the layer surface. Formation of IDBs was often associated with specific defects at the interface with the substrate. Dislocation generation and annihilationwere shown to be mainly growth-related processes and, hence, can be controlled by the growth conditions, especially during the first growth stages. The decrease of electron Hall mobility and the simultaneous increase of the intensity of "green"luminescence with increasing dislocation density suggest that dislocation-related deep levels are created in the bandgap.