Epitaxial growth of high-quality InN thin film on sapphire substrates by RF-MBE - effect of low-temperature-grown InN/GaN buffer layers

摘要

Studying InN epitaxial growth on a sapphire substrate by RF-MBE, we found that a buffer layer formed with a low-temperature-grown GaN intermediate layer and a low-temperature-grown InN layer on a sapphire substrate was very effective to improve the crystal quality and adhesiveness of InN film. The surface of a 260-nm-thick InN film was quite smooth with the RMS roughness of 3.8 nm. The room-temperature Hall mobility and carrier density of the InN film were 1420 cm{sup}2/V.s and 1.4×10{sup}18 cm{sup}(-3), respectively.